Haojun Zhang and laser team are featured on Semiconductor Today | News | Solid State Lighting & Energy Electronics Center
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Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
BluGlass Announces Entry into GaN Laser Diode Business
Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems
High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4
InGaN multiple quantum well (QW) laser diode structure as grown on... | Download Scientific Diagram
Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...
Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer